Electronic Components, Technology and Materials
Department of Microelectronics

dr. C.B. Biasotto

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

PhD thesis (Oct 2011): DotFETs: MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology
Promotor: Lis Nanver

Expertise: Thin film deposition, high density plasma, and high speed MOS devices

Biography

Cleber Biasotto was born in Campinas, Sao Paulo, Brazil in 1976. He received the B.S. degree in electrical engineering from the Paulista University (UNIP), Campinas, Sao Paulo, Brazil in 2002 and M.Sc. degree in electrical engineering (Microelectronics) from the State University of Campinas (UNICAMP), Campinas, Ṣo Paulo, Brazil in 2005. His master thesis concerned in obtaining and characterization the nitride, oxide and silicon oxynitride thin films deposited by high density plasma for application in Microelectromechanical Systems (MEMS). Since 2003 he has been with the School of Electrical and Computer Engineering (FEEC), Department of Semiconductors, Instruments and Photonics (DSIF) and the Center of Semiconductor Components (CCS) at UNICAMP and in February 2007 he joined the Faculty of Electrical Engineering, Mathematics and Computer Science, within the Laboratory of Electronic Components, Technology and Materials of Delft Institute of Microelectronics and Submicron-technology, Delft University of Technology (TUDelft), Delft, The Netherlands. He is currently pursuing the Ph.D. degree at TUDelft and UNICAMP. His main interests are thin film deposition, high density plasma, and high speed MOS devices.

Publications

  1. Integration of MOSFETs with SiGe dots as stressor material
    L.K. Nanver; V. Jovanovic; C. Biasotto; J. Moers; D. Gruetzmacher; J.J. Zhang; N. Hrauda; M. Stoffel; F. Pezzoli; O.G. Schmidt; L. Miglio; H. Kosina; A. Marzegalli; G. G. Vastola. Mussler; J. Stangl; G. Bauer a;
    Solid-State Electronics,
    Volume 60, Issue 1, pp. 75-83., 2011. DOI 10.1016/j.sse.2011.01.038.

  2. X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
    N. Hrauda; J. Zhang; E. Wintersberger; T. Etzelstorfer; B. Mandl; J. Stangl; D. Carbone; V. Holy; V. Jovanovic; C. Biasotto; L.K. Nanver; J. Moers; D. Grutzmacher; G. Bauer;
    Nano Letters,
    Volume 11, Issue 7, pp. 2875-2880, 2011. DOI 10.1021/nl2013289.

  3. Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions
    C. Biasotto; V. Gonda; L.K. Nanver; T.L.M. Scholtes; J. van der Cingel; D. Vidal; V. Jovanovi_;
    Journal of Electronic Materials,
    Volume 40, Issue 11, pp. 2187-2196, 2011. DOI 10.1007/s11664-011-1734-6.

  4. DotFETs: MOSFETs strained by a single SiGe dot in a low-temperature ELA technology
    C. Biasotto;
    PhD thesis, Delft University of Technology, Oct. 2011. ISBN 978-90-8570-425-6; Promotor: prof.dr. L.K. Nanver.

  5. n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility.
    V. Jovanovic; C. Biasotto; L.K. Nanver; J. Moers; D. Gruetzmacher; J. Gerharz; G. Mussler; J. van der Cingel; J.J. Zhang; G. Bauer; O.G. Schmidt; L. Miglio;
    IEEE Electron Device Letters,
    Volume 31, Issue 10, pp. 1083-1085, 2010.

  6. Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator
    Agata Sakic; Yann Civale; Lis K. Nanver; Cleber Biasotto; Vladimir Jovanovic;
    In MRS Spring Meeting Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
    San Francisco, Apr. 2010.

  7. Field effect transistor devices based on strained Si channels above buried 2D periodic SiGe quantum dots.
    N. Hrauda; T. Etzelstorfer; J. Strangl; D. Carbone; G. Bauer; C. Biasotto; V. Jovanovic; L.K. Nanver; J. Moers; D. Gruetzmacher;
    In Materials Research Society (MRS) spring meeting,
    San Francisco, USA, 2010.

  8. MOSFETS on self assembled SiGe dots with strain enhanced mobility.
    V. Jovanovic; C. Biasotto; L.K. Nanver; J. Moers; D. Grutzmacher; J. Gerharz; G. Mussler; J. van der Cingel; J.J. Zhang; Z. Jianjun; G. Bauer; O.G. Schmidt; L. Miglio;
    In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
    Shanghai, China, pp. 926-928, 2010.
    document

  9. n-channel MOSFETs fabricated on self assembled SiGe dots for strain enhanced mobility
    Vladimir Jovanovic; Cleber Biasotto; Juergen Moers; Detlev Grutzmacher; Jianjun Zhang; Nina Hrauda; Mathieu Stoffel; Fabio Pezzoli; Oliver G. Schmidt; Leo Miglio; Hans Kosina; Anna Marzegalli; Guglielmo Vastola; Greg;
    In STW-SAFE2010 Conference Proceeding,
    Veldhoven, pp. 101-104, 2010.

  10. Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET
    C. Biasotto; V. V. Jovanovic Gonda; J. van der Cingel; S. Milosavljevic; L. K. Nanver;
    In Ultimate Integration on Silicon Conference (ULIS-2009),
    Aachen, Germany, Mar. 2009.
    document

  11. ntegration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET
    C. Biasotto; V. Jovanovic; V. Gonda; J. van der Cingel; Milosavljevic; S; L.K. Nanver;
    In Proceedings of the 10th International Conference on ULtimate Integration of Silicon (ULIS 2009),
    Aachen, Germany: IEEE, pp. 181-184, 2009.

  12. Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions
    C. Biasotto; V. Jovanovic; L.K. Nanver; J. van der Cingel;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 189-192, 2009.
    document

  13. Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation
    C. Biasotto; V. Gonda; L.K. Nanver; J. van der Cingel; Jovanovic;
    In Proc. of 24th Symposium on Microelectronics Technology and Devices Dielectric and Semiconductor Materials, Devices, and Processing (SBMicro 2009),
    Natal, Brazil, Electrochemical Society, pp. 19-27, 2009.

  14. Application of Laser Annealing in the EU FP6 Project D-DotFET
    L.K. Nanver; V. Jovanovic; C. Biasotto; J. van der Cingel;
    In Proc. Of 17th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP 2009),
    pp. 1-7, 2009.
    document

  15. Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications
    C. Biasotto; J.A. Diniz; A.M. Daltrini; S.A. Moshkalev; M.J.R. Monteiro;
    Thin Solid Films,
    Volume 516, pp. 7777-7782, 2008.

  16. Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited Arsenic monolayers
    M. Popadic; Lis K. Nanver; Cleber Biasotto; Viktor Gonda; Johan van der Cingel;
    In Proceedings of 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP 2008),
    Las Vegas, Nevada, USA, pp. 141-146, Sep. 2008.

  17. Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma
    C. Biasotto; A. M. Daltrini; R. C. Teixeira; F. A. Boscoli; J. A. Diniz; S. A. Moshkalev; I. Doi;
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures,
    Volume 25, Issue 4, pp. 1166-1170, Jul. 2007.

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Last updated: 26 Dec 2018

Cleber Biasotto

Alumnus