dr. V. Gonda

1. Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions
   C. Biasotto; V. Gonda; L.K. Nanver; T.L.M. Scholtes; J. van der Cingel; D. Vidal; V. Jovanovi_;
   Journal of Electronic Materials,
   Volume 40, Issue 11, pp. 2187-2196, 2011. DOI 10.1007/s11664-011-1734-6.

2. Thermal budget considerations for excimer laser annealing of implanted dopant
   V. Gonda; J. Venturini; C. Sabatier; J. van der Cingel; L.K. Nanver;
   Journal of optoelectronics and advanced materials,
   Volume 12, Issue 3, pp. 466-469, 2010.

3. Effect of the pulse offset on the thermal cycle for double excimer laser annealing of implanted silicon
   V. Gonda; L.K. Nanver;
   In Proceedings of OGET conference 2009,
   Gyergy�szentmikl�s, Romania: Hungarian Technical Scientific Society of Transylvania, Romania, pp. 135-138, 2010.

4. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
   L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
   IEEE Journal of Solid-State Circuits,
   Volume 44, Issue 9, pp. 2322-2338, 2009.

5. Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET
   C. Biasotto; V. V. Jovanovic Gonda; J. van der Cingel; S. Milosavljevic; L. K. Nanver;
   In Ultimate Integration on Silicon Conference (ULIS-2009),
   Aachen, Germany, Mar. 2009.
   document

6. ntegration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET
   C. Biasotto; V. Jovanovic; V. Gonda; J. van der Cingel; Milosavljevic; S; L.K. Nanver;
   In Proceedings of the 10th International Conference on ULtimate Integration of Silicon (ULIS 2009),
   Aachen, Germany: IEEE, pp. 181-184, 2009.

7. Thermal budget considerations for excimer laser annealing of implanted dopants
   V. Gonda; J. Venturini; C. Sabatier; J. van der Cingel; L.K. Nanver;
   In Proc. of E-MRS 2009 Spring Meeting,
   Strasbourg, France, MRS, pp. 1-4, 2009.
   document

8. Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation
   C. Biasotto; V. Gonda; L.K. Nanver; J. van der Cingel; Jovanovic;
   In Proc. of 24th Symposium on Microelectronics Technology and Devices Dielectric and Semiconductor Materials, Devices, and Processing (SBMicro 2009),
   Natal, Brazil, Electrochemical Society, pp. 19-27, 2009.

9. Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode Technology
   L.K. Nanver; F. Sarubbi; V. Gonda; M. Popadic; T.L.M. Scholtes; W. de Boer; K. Buisman;
   In Proceedings of IEEE International Workshop on Junction Technology (IWJT 2008),
   Shanghai, China, pp. 101-106, May 2008.
   document

10. Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology
    L.K. Nanver; V. Gonda; Y. Civale; T.L.M. Scholtes; L. La Spina; H. Schellevis G. Lorito; F. Sarubbi; M. Popadic; K. Buisman; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 9th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2008),
    Beijing, China, pp. 1184-1187, Oct. 2008.

11. SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion
    G. Lorito; V. Gonda; T.L.M. Scholtes; L.K. Nanver;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 291-294, May 2008.

12. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
    L..K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 273-280, May 2008.

13. Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited Arsenic monolayers
    M. Popadic; Lis K. Nanver; Cleber Biasotto; Viktor Gonda; Johan van der Cingel;
    In Proceedings of 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (RTP 2008),
    Las Vegas, Nevada, USA, pp. 141-146, Sep. 2008.

14. Special RF/Microwave Devices in Silicon-on-Glass Technology
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of IEEE Bipolar/BiCMOS Circuit and Technology Meeting (BCTM 2008),
    Monterey, CA, USA, pp. 33-40, Oct. 2008.

15. Excimer laser annealing for ultrashallow junctions and contacts
    V. Gonda;
    PhD thesis, Delft University of Technology, Dec. 2008. ISBN 978-90-8559-475-8; Promotor: prof. L.K. Nanver.

16. Double laser annealing of implanted silicon by using laser pulse offsets
    V. Gonda; J. Slabbekoorn; L. K. Nanver;
    In Proc. SAFE/STW,
    Veldhoven, The Netherlands, pp. 517-520, Nov. 2007.

17. Silicon laser annealing by a two-pulse laser system with variable pulse offsets
    V. Gonda; J. Slabbekoorn; L. K. Nanver;
    In Proc. IEEE RTP 2007,
    Catania, Italy, pp. 257-262, Oct. 2007.

18. Electrical Characterization of Residual Bulk Defects after Laser Annealing��of Implanted Shallow Junctions
    S. Liu; V. Gonda; T. L. M. Scholtes; L. K. Nanver;
    In Proc. IEEE-IWJT,
    Shanghai, China, IEEE, pp. 112-115, 2006. ISBN 1-4244-0047-3.
    document

19. Reliability issues related to laser-annealed implanted back-wafer contacts��in bipolar silicon-on-glass processes
    G. Lorito; V. Gonda; S. Liu; T. L. M. Scholtes; H. Schellevis; L. K.�� Nanver;
    In Proc. IEEE International Conference on Microelectronics, MIEL,
    Belgrade, Serbia and Montenegro, IEEE, pp. 369-372, 2006. ISBN 1-4244-0116-x.

20. Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions in Doping Engineering for Device Fabrication
    V. Gonda; S. Liu; T. L. M. Scholtes; L. K. Nanver;
    In Mater. Res. Soc. Symp. Proc.,
    Warrendale, PA, 2006.
    document

21. Silicon-on-glass technology for RF and microwave device fabrication
    Lis K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; H. Cong; S. Milosavljevic; E.J.G. Goudena;
    In 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ICSICT-2006,
    Shanghai, China, pp. 162-165, 2006. ISBN 1-4244-0160-7.
    document

22. The effect of the contact window edges on the perimeter currents of shallow junction diodes
    V. Gonda; T. L. M. Scholtes; L. K. Nanver;
    In Proc. STW/SAFE,
    Veldhoven, The Netherlands, pp. 88-91, 2005.
    document

23. Near-ideal implanted shallow-junction diode formation by excimer laser annealing
    V. Gonda; A. Burtsev; T. L. M. Scholtes; L. K. Nanver;
    In Proc. IEEE Rapid Thermal Processing,
    pp. 93-100, 2005.
    document

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