dr. C. Mok

1. Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility
   L.K. Nanver; L. Qi; V. Mohammadi; K.R.M. Mok; W.B. de Boer; N. Golshani; A. Sammak; T.L.M. Scholtes; A. Gottwald; U. Kroth; F. Scholze;
   Journal of Selected Topics in Quantum Electronics,
   Volume 20, Issue 6, pp. pp.1-11, 2014.

2. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
   V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver;
   Microelectronic Engineering,
   Volume 125, pp. 45-50, 2014.

3. VUV/Low-Energy-Electron Si Photodiodes with Post-Metal 400�C PureB Deposition
   V. Mohammadi; L. Qi; N. Golshani; K. R. C. Mok; W. B. de Boer; A. Sammak; J. J. Derakhshandeh. van der Cingel; L. K. Nanver;
   IEEE Electron Device Letters,
   Volume 34, Issue 12, 2013. DOI 10.1109/LED.2013.2287221.

4. Effects of Annealing on Chemical-Vapor Deposited PureB Layers
   K. R. C. Mok; A. H. G. Vlooswijk; V. Mohammadi; L. K. Nanver;
   ECS Journal of Solid State Science and Technology,
   Volume 2, Issue 9, pp. 413-417, 2013. DOI 10.1149/2.044309jss.

5. Investigation of the Issues Arising by Lowering the Deposition Temperature of the PureB-layer on Si/SiO2 Surfaces
   V. Mohammadi; N. Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
   In ICT.OPEN,
   Eindhoven, The Netherlands, Nov. 2013.

6. Temperature Dependency of the Kinetics of PureB CVD Deposition over Patterned Si/SiO2 Surfaces
   V. Mohammadi; N.Golshani; K.R.C. Mok; W.B. de Boer; J. Derakhshandeh; L.K. Nanver and;
   In E-MRS 2013 Fall Meeting 2013,
   Warsaw, Poland, Sep 2013.
   document

7. Insights to emitter saturation current densities of boron implanted samples based on defects simulations
   K.R.C. Mok; R.C.G. Naber; L.K. Nanver;
   In AIP Conf. Proc,
   Valladolid, Spain, pp. 245-248, Jun. 2012. ISBN 978-0-7354-1108-1; DOI 10.1063/1.4766534.

8. Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
   L.K. Nanver; A. Sammak; V. Mohammadi; K.R.C. Mok; L. Qi; A. Sakic; N. Golshani; J. Derakhshandeh; T.M.L. Scholtes; W.D. de Boer;
   In ECS Trans. 2012: 27th Symposium on Microelectronics Technology and Devices (SBMicro2012),
   Brazil, Brasilia, pp. 25-33, Aug. 2012. DOI 10.1149/04901.0025ecst.

9. Applications of PureB and PureGaB ultrashallow junction technologies
   L.K. Nanver; A. _akic; V. Mohammadi; J. Derakhshandeh; K.R.C. Mok; L. Qi; N. Golshani; T.M.L. Scholtes; W.B. de Boer;
   In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSCT 2012),
   Xi'an, pp. 303-306., Oct. 2012.
   document

10. Low-pressure chemical vapor deposition of pureB layers on silicon for p+n junction formation
    K.R.C. Mok; V. Mohammadi; L.K. Nanver; W.D. de Boer; A.H.G. Vlooswijk;
    In 12th International Workshop on Junction Technology (IWJT 2012),
    Shanghai, China, pp. 113-116, May 2012. DOI 10.1109/IWJT.2012.6212822.

11. with transferring PureB CVD from an epitaxial reactor to a furnace system
    K.R.C. Mok; L.K. Nanver; W.D. de Boer; A.H.G. Vlooswijk;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, pp. 76-78, Nov. 2011.

12. Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
    L.K. Nanver; T. L. M. Scholtes; F. Sarubbi; W.B. de Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok; L. Shi; S. Nihtianov; K. Buisman;
    In 18th Annual Conference on Advanced Thermal Processing of Semiconductors-RTP 2010,
    Gainesville, FL, Sep. 2010.

BibTeX support