Jinglin Li

1. Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology
   Jiarui Mo; Jinglin Li; Alexander May; Mathias Rommel; Sten Vollebregt; Guoqi Zhang;
   IEEE Transactions on Electron Devices,
   Volume 71, Issue 10, pp. 5881-5887, 2024. DOI: 10.1109/TED.2024.3450828

2. A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices
   Jinglin Li; Aditya Shekhar; Willem D. van Driel; GouQi Zhang;
   IEEE Transactions on Electron Devices,
   Volume 71, Issue 12, pp. 7230-7243, 2024. DOI: 10.1109/TED.2024.3482252

3. Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor
   Jinglin Li; Sten Vollebregt; Yaqian Zhang; Aditya Shekhar; Alexander May; Willem D. Van Driel;
   In 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),
   2024. DOI: 10.1109/EuroSimE60745.2024.10491433

4. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
   Jiarui Mo; Jinglin Li; Yaqian Zhang; Joost Romijn; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
   IEEE Electron Device Letters,
   Volume 44, Issue 6, pp. 995-998, 2023. DOI: 10.1109/LED.2023.3268334

5. MOSFET-based And P-N Diode Based Temperature Sensors In A 4H-sSiC CMOS Technology
   Jiarui Mo; Jinglin Li; Yaqian Zhang; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
   In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
   2023.
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