Electronic Components, Technology and Materials
Department of Microelectronics

MSc Jiarui Mo

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Themes: Advanced sensor materials, Micro/Nano System Integration and Reliability

Biography

Jiarui was born in Mianyang, Sichuan, China. He received his B.Sc degree from Chongqing Univerity, China, in 2017, and the M.Sc degree in Electrical Engineering from the Delft University of Technology, Netherland, in 2019. After graduation, he shortly worked in the National Centre for High-Resolution Electron Microscopy.

Since July 2020, he started working as a Ph.D. researcher in the group of Electronic, Components, Technology, and Materials. His main research interest is silicon carbide sensors and electronics for harsh environments

Projects history

Intelligent Reliability 4.0

  1. A Fully Integrated Sequential Synchronized Switch Harvesting on Capacitors Rectifier Based on Split-Electrode for Piezoelectric Energy Harvesting
    Xinling Yue; Jiarui Mo; Zhiyuan Chen; Sten Vollebregt; Guoqi Zhang; Sijun Du;
    IEEE Transactions on Power Electronics,
    Volume 39, Issue 6, pp. 7643-7653, 2024. DOI: 10.1109/TPEL.2024.3369728

  2. A high aspect ratio surface micromachined accelerometer based on a SiC-CNT composite material
    Jiarui Mo; Shreyas Shankar; Roberto Pezone; Guoqi Zhang; Sten Vollebregt;
    Microsystems & Nanoengineering,
    Volume 10, Issue 42, 2024. DOI: 10.1038/s41378-024-00672-x

  3. An Analog to Digital Converter in a SiC CMOS Technology for High-temperature Applications
    Jiarui Mo; Yunfan Niu; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
    Applied Physics Letters,
    Volume 124, Issue 15, 2024. DOI: 10.1063/5.0195013

  4. Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology
    Jiarui Mo; Jinglin Li; Alexander May; Mathias Rommel; Sten Vollebregt; Guoqi Zhang;
    IEEE Transactions on Electron Devices,
    Volume 71, Issue 10, pp. 5881-5887, 2024. DOI: 10.1109/TED.2024.3450828

  5. Investigating Mechanical Properties of Silicon Carbide Coated Carbon Nanotube Composite at Elevated Temperatures
    Jiarui Mo; Gerald J.K. Schaffar; Leiming Du; Verena Maier-Kiener; Daniel Kiener; Sten Vollebregt; Guoqi Zhang;
    In IEEE 37th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2024),
    2024. DOI: 10.1109/MEMS58180.2024.10439455

  6. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
    Jiarui Mo; Jinglin Li; Yaqian Zhang; Joost Romijn; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
    IEEE Electron Device Letters,
    Volume 44, Issue 6, pp. 995-998, 2023. DOI: 10.1109/LED.2023.3268334

  7. Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications
    Yunfan Niu; Jiarui Mo; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
    In Proc. of IEEE Sensors,
    2023. DOI: 10.1109/SENSORS56945.2023.10325061

  8. Silicon carbide reinforced vertically aligned carbon nanotube composite for harsh environment MEMS
    Jiarui Mo; Shreyas Shankar; Guoqi Zhang; Sten Vollebregt;
    In IEEE 36th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2023),
    2023. DOI: 10.1109/MEMS49605.2023.10052162

  9. Electromigration-induced local dewetting in Cu films
    Yaqian Zhang; Jiarui Mo; Zhen Cui; Sten Vollebregt; GuoQi Zhang;
    In Proc. of the IEEE International Interconnect Technology Conference,
    2023. DOI: 10.1109/IITC/MAM57687.2023.10154761

  10. High-performance Silicon Carbide-on-insulator Thermoresistive High-temperature Sensor Up To 750 C
    Baoyun Sun; Jiarui Mo; Willem D. van Driel; GuoQi Zhang;
    In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
    2023.
    document

  11. MOSFET-based And P-N Diode Based Temperature Sensors In A 4H-sSiC CMOS Technology
    Jiarui Mo; Jinglin Li; Yaqian Zhang; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
    In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
    2023.
    document

  12. Silicon Carbide-on-Insulator Thermal-Piezoresistive Resonator for Harsh Environment Application
    Baoyun Sun; Jiarui Mo; Hemin Zhang; Henk W. van Zeijl; Willem D. van Driel; GuoQi Zhang;
    In IEEE 36th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2023),
    2023. DOI: 10.1109/MEMS49605.2023.10052401

  13. Time Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS technology
    Yaqian Zhang; Jiarui Mo; Sten Vollebregt; GuoQi Zhang;
    In 24th International Conference on Electronic Packaging Technology (ICEPT),
    2023. DOI: 10.1109/ICEPT59018.2023.10492218

  14. Surface-micromachined Silicon Carbide Pirani Gauges for Harsh Environments
    Jiarui Mo; Luke Middelburg; Bruno Morana; H.W. Van Zeijl; Sten Vollebregt; GuoQi Zhang;
    IEEE Sensors Letters,
    Volume 21, Issue 2, pp. 1350-1358, 2021. DOI: 10.1109/JSEN.2020.3019711

BibTeX support

Last updated: 24 Nov 2023

Jiarui Mo

MSc students